, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC2979 description ? collector-emitter sustaining voltage- : vc0(sus)= soov(min) ? collector-emitter saturation voltage- : vce(sat)= 1.0v(max)@ lc= 0.75a ? fast switching speed applications ? designed for high-voltage, high-speed and high power switching applications. absolute maximum ratings(ta=25'c) symbol vobo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous total power dissipation @ tc=25-c junction temperature storage temperature range value 900 800 7 3 6 1.5 40 150 -55-150 unit v v v a a a w 'c 'c 1 2 v> 1 - pin 2 < 3 1.base 2. collector 3. emitter to-220c package 1 mq| a j t ???-b ?? j-?ft t> * h '] "t | k f c i a 0 *. l rr j did/ a b c d f g b j k l q r s u v s'~ l d c --? mm win 15.50 9.90 4.20 0.70 3.40 4.98 2.6s 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 max 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 ? i rk nl semi-conductors reserves the right to change test conditions, parameter limits anil package dimensions \vithout notice. information ('urnishal hv n.i semi-comluctors is believed to he both accurate and reliable at the time ofgoini lo press. i lo\\c\er, n,l scmi-(.'oiuluclors assumes no responsibility lor an> errors or omissions discovered in its ii.se. nl semi-l'tiiidiiclors encciirajies customers to verily thai datasheels are currcnl before placing oiilers. qualify -semi-conductors
silicon npn power transistor 2SC2979 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) v(br)ebo vce(sat) vee(sat) icbo iceo hpe-1 hfe-2 parameter collector-emitter sustaining voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current dc current gain dc current gain conditions lc=10ma;lb=0 'le=10ma; lc=0 lc=0.75a; ib=0.15a ig=0.75a; ib=0.15a vcb= 750v; ie=0 vce= 650v; rbe=0 lc= 0.3a; vce= 5v lc= 1 .5a; vce= 5v min 800 7 15 7 max 1.0 1.5 100 100 unit v v v v u a ma switching times ton tstg tf turn-on time storage time fall time lc= 1 -5a, ib1= 0.3a; ib2= -0.75a, vcc~ 250v 1.0 3.0 1.0 u s u s m s
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